收藏本站
New Product
Si7655DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? ) Max.
I D (A)
Q g (Typ.)
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
- 20
0.0036 at V GS = - 10 V
0.0048 at V GS = - 4.5 V
0.0085 at V GS = - 2.5 V
- 40 e
- 40 e
- 40 e
72 nC
Package with Small Size and Low 0.75 mm
Profile
? 100 % R g and UIS Tested
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
0.75 mm
? Smart Phones, Tablet PCs, Mobile
Computing
S
3.3 mm
1
S
2
S
3
S
4
G
- Battery Switch
- Load Switch
G
8
D
7
D
D
6
5
D
Bottom View
D
Orderin g Information:
Si7655D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise note d)
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 12
- 40 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 40 e
- 31 a, b
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 25 a, b
- 100
- 40 e
- 4 a, b
- 20
20
A
mJ
T C = 25 °C
57
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
36
4.8 a, b
W
T A = 70 °C
3 a, b
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7658ADP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7682DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7726DN-T1-GE3 MOSFET N-CH 30V 35A 1212-8
SI7738DP-T1-E3 MOSFET N-CH D-S 150V PPAK 8SOIC
SI7758DP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7802DN-T1-GE3 MOSFET N-CH 250V 1.24A 1212-8
SI7810DN-T1-GE3 MOSFET N-CH D-S 100V 1212-8 PPAK
SI7812DN-T1-GE3 MOSFET N-CH 75V 16A 1212-8 PPAK
相关代理商/技术参数
SI7658ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI7658ADP-T1-GE3 功能描述:MOSFET 30V 60A 83W 2.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7658DP-T1-E3 功能描述:MOSFET 30V 60A 104W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7661 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:CMOS VOLTAGE CONVERTERS
Si7661AA-4 功能描述:电荷泵 RoHS:否 制造商:Maxim Integrated 功能:Inverting, Step Up 输出电压:- 1.5 V to - 5.5 V, 3 V to 11 V 输出电流:100 mA 电源电流:1 mA 最大工作温度:+ 70 C 封装 / 箱体:SOIC-8 Narrow 封装:Tube
SI7661AK 制造商:Maxim Integrated Products 功能描述:CMOS VOLTAGE CONVERTER - Bulk
SI7661CJ 功能描述:电荷泵 CMOS Voltage Converter RoHS:否 制造商:Maxim Integrated 功能:Inverting, Step Up 输出电压:- 1.5 V to - 5.5 V, 3 V to 11 V 输出电流:100 mA 电源电流:1 mA 最大工作温度:+ 70 C 封装 / 箱体:SOIC-8 Narrow 封装:Tube
SI7661CJ+ 功能描述:电荷泵 CMOS Voltage Converter RoHS:否 制造商:Maxim Integrated 功能:Inverting, Step Up 输出电压:- 1.5 V to - 5.5 V, 3 V to 11 V 输出电流:100 mA 电源电流:1 mA 最大工作温度:+ 70 C 封装 / 箱体:SOIC-8 Narrow 封装:Tube